He-charged oxide dispersion strengthened(ODS)FeCrNi films were prepared by a radiofrequency(RF)plasma magnetron sputtering method in a He and Ar mixed atmosphere at150℃.As a comparison,He-charged FeCrNi films were also fabricated at the same conditions through direct current(DC)plasma magnetron sputtering.The doping of He atoms and Y_2O_3 in the FeCrNi films was realized by the high backscattered rate of He ions and Y_2O_3/FeCrNi composite target sputtering method,respectively.Inductive coupled plasma(ICP)and x-ray photoelectron spectroscopy(XPS)analysis confirmed the existence of Y_2O_3 in FeCrNi films,and Y_2O_3 content hardly changed with sputtering He/Ar ratio.Cross-sectional scanning electron microscopy(SEM)shows that the FeCrNi films were composed of dense columnar nanocrystallines and the thickness of the films was obviously dependent on He/Ar ratio.Nanoindentation measurements revealed that the FeCrNi films fabricated through DC/RF plasma magnetron sputtering methods exhibited similar hardness values at each He/Ar ratio,while the dispersion of Y_2O_3 apparently increased the hardness of the films.Elastic recoil detection(ERD)showed that DC/RF magnetron sputtered FeCrNi films contained similar He amounts(~17 at.%).Compared with the minimal change of He level with depth in DC-sputtered films,the He amount decreases gradually in depth in the RF-sputtered films.The Y_2O_3-doped FeCrNi films were shown to exhibit much smaller amounts of He owing to the lower backscattering possibility of Y_2O_3 and the inhibition effect of nano-sized Y_2O_3 particles on the He element. He-charged oxide dispersion strengthened (ODS) FeCrNi films were prepared by a radiofrequency (RF) plasma magnetron sputtering method in a He and Ar mixed atmosphere at 150 ° C. As a comparison, He-charged FeCrNi films were also fabricated at the same condition through Direct current (DC) plasma magnetron sputtering. The doping of He atoms and Y_2O_3 in the FeCrNi films was realized by the high backscattered rate of He ions and Y_2O_3 / FeCrNi composite target sputtering method, respectively. Inductively coupled plasma (ICP) and x- ray photoelectron spectroscopy (XPS) analysis confirmed the existence of Y_2O_3 in FeCrNi films, and Y_2O_3 content hardly changed with sputtering He / Ar ratio. Cross-sectional scanning electron microscopy (SEM) shows that the FeCrNi films were composed of dense columnar nanocrystallines and the thickness of the films was obviously dependent on He / Ar ratio. Nanoindentation measurements revealed that the FeCrNi films fabricated through DC / RF plasma magnetron sputtering methods exhibite Similarity values ​​of each He / Ar ratio, while the dispersion of Y 2 O 3 apparently increased the hardness of the films. Elastic recoil detection (ERD) showed that DC / RF magnetron sputtered FeCrNi films contained similar He Numbers (~ 17 at.%) .Compared with the minimal change of He level with depth in DC-sputtered films, the He amount decreased gradually in depth in the RF-sputtered films. Y_2O_3-doped FeCrNi films were shown to exhibit much smaller amounts of He owing to the lower backscattering possibility of Y_2O_3 and the inhibition effect of nano-sized Y_2O_3 particles on the He element.