论文部分内容阅读
分析研究了一种新型１２ＧＨｚＧａＡｓＭＥＳＦＥＴ单片混频器，这种混频器采用级联ＦＥＴ作为混频元件。射频（ＲＦ）和本振（ＬＯ）信号分别通过各自的匹配网络进入混频电路，在中频输出端用中频缓冲放大器代替通常的中频匹配电路。电路在厚０．２ｍｍ，面积１．５ｍｍ×１．２ｍｍ的ＧａＡｓ基片上实现。设计的ＭＭＩＣ混频器在本振１１ＧＨｚ，射频１１．７～１２．２ＧＨＺ频率范围内的最大变频增益１．８ｄＢ。这一结果使进一步研究单片微波接收机成为可能。
A new type of 12GHz GaAsMESFET monolithic mixer is analyzed and studied. This kind of mixer adopts cascaded FET as the mixing element. Radio frequency (RF) and local oscillator (LO) signals enter the mixing circuit through their respective matching networks respectively, and the intermediate frequency buffer amplifier replaces the usual IF matching circuit at the IF output. The circuit is implemented on a GaAs substrate with a thickness of 0.2 mm and an area of 1.5 mm by 1.2 mm. The designed MMIC mixer has a maximum conversion gain of 1.8 dB at a local oscillator of 11 GHz and a radio frequency of 11.7 to 12.2 GHz. This result makes it possible to further study monolithic microwave receivers.