亚琛电磁研究所订购了一台Aixtron公司的AIX200/4 RF—S设备。这台设备将用来研究基于Si衬底的GaN淀积。预计低成本的Si衬底与GaN结构相结合会大大影响未来高功率RF器件的价格。亚琛电磁研究所将用AIX 200/4 RF—S设备淀积高品质的AlGaN/GaN层和器件 Aachen Electromagnetic Institute ordered a Aixtron AIX200 / 4 RF-S equipment. This device will be used to investigate GaN deposition based on Si substrates. It is expected that the combination of low cost Si substrate and GaN structure will greatly affect the future price of high power RF devices. Aachen Electromagnetic Research Institute to Deposit High-Quality AlGaN / GaN Layers and Devices with AIX 200/4 RF-S Equipment