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利用空心阴极离子镀（ＨＣＤ） 技术在硅片上镀一层均匀Ｃｒ＿Ｎ 薄膜。用Ｘ 射线衍射技术（ＸＲＤ） 分析了氮气分压对沉积的Ｃｒ＿Ｎ薄膜结构的影响。用椭偏测量术对Ｃｒ＿Ｎ 薄膜的光学常数进行测量
Hollow cathode ion plating (HCD) was used to deposit a uniform layer of Cr_N on the silicon wafer. The effect of nitrogen partial pressure on the structure of deposited Cr_N thin films was analyzed by X-ray diffraction (XRD). The ellipsometry was used to measure the optical constants of Cr_N thin films