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利用扫描电子显微镜(SEM)、X射线衍射仪(XRD)、透射电镜(TEM)和俄歇电子能谱仪(AES)研究了AlON/TiAlON_D/TiAlON_M/Cu选择性吸收涂层高温真空条件下显微形貌、结构与化学成分的变化。结果表明,退火前后选择性吸收涂层的多层膜结构和微观形貌保持稳定。制备态涂层的AlON层和TiAlON_D层为非晶结构,TiAlON_M层由非晶基体和分散的晶粒组成。550℃高温真空退火24 h后,TiAlON_M层发生晶化,晶粒长大。退火过程中,O元素从AlON层扩散至TiAlON双吸收层,而N元素从TiAlON双吸收层扩散至AlON层,同时膜层界面区域变宽。高温真空处理后涂层的吸收率略有降低,而发射率保持不变。晶化导致TiAlON_M层吸光性能下降,以及N和O元素扩散导致最优化结构被破坏是涂层吸收率衰减的主要原因。涂层在真空下热稳定激活能为189.5 k J·mol~(-1),表明涂层具有较好的热稳定性。
The properties of AlON / TiAlON_D / TiAlON_M / Cu selective absorption coatings under high temperature and vacuum conditions were investigated by scanning electron microscopy (SEM), X-ray diffraction (XRD), transmission electron microscopy (TEM) and Auger electron spectroscopy (AES) Micro topography, structure and chemical composition changes. The results show that the multilayer structure and morphology of the selective absorption coating remain stable before and after annealing. The AlON layer and the TiAlON_D layer of the as-prepared coating have an amorphous structure, and the TiAlON_M layer is composed of an amorphous matrix and dispersed crystal grains. After annealed at high temperature of 550 ℃ for 24 h, the TiAlON_M layer crystallizes and the grains grow up. During the annealing process, the O element diffused from the AlON layer to the TiAlON double absorption layer, while the N element diffused from the TiAlON double absorption layer to the AlON layer, and the interface area of the film became wider. After high-temperature vacuum treatment the absorption rate of the coating slightly decreased, while the emissivity remained unchanged. Crystallization led to TiAlON_M layer absorbing properties decline, and the diffusion of N and O elements lead to the destruction of the optimal structure is the main reason for the attenuation of coating absorption. The thermal activation energy of the coating under vacuum is 189.5 kJ · mol -1, indicating that the coating has good thermal stability.