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本文探讨了掺Ｓｉ对Ｂ４Ｃ半导体的热电性能（包括电导率、热导率及Ｓｅｅｂｅｃｋ系数）及显微结构的影响，应用小极化子跃迁机制，讨论了Ｓｉ掺杂Ｂ４Ｃ半导体的传输行为
In this paper, the effects of Si doping on the thermoelectric properties (including conductivity, thermal conductivity and Seebeck coefficient) and microstructure of B4C semiconductors were investigated. The transfer mechanism of Si doping B4C semiconductors was discussed using the small polaron transition mechanism