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本文对P型(100)无位错硅晶片的热氧化堆垛层错长度生长和收缩规律进行了研究.给出层错长度、氧化时间,氧化温度之间的关系为L=kt~nexp(~-E/KT).对于干氧氧化,n和E分别为0.62和2.08±0.1ev;对于湿氧氧化,n和E分别为0.8和2.11±0.2ev.用S—450扫描电子显微镜对层错的生长过程进行了观察.热氧化长入硅中的层错分别在高温干氮气氛中和C_2HCI_3/O_2气氛中热处理时收缩、测得相应的层错收缩激活能分别为4.37ev和3.55ev.在干氧中加入洽当的C_2HCI_3氧化,可完全不产生氧化层错.在氧化前硅片用化学抛光处理或在干N_2中热处理能将层错密度降低2—3个数量级.
In this paper, the growth and shrinkage of stacking faults in P-type (100) dislocation-free silicon wafers were investigated. The relationship between stacking fault length, oxidation time and oxidation temperature was given as L = kt ~ nexp ~ -E / KT). For dry oxygen oxidation, n and E were 0.62 and 2.08 ± 0.1ev, respectively; for wet oxidation, n and E were 0.8 and 2.11 ± 0.2ev, respectively. The layer was analyzed by S-450 scanning electron microscope The growth process of the fault was observed.The layer faults in the thermally oxidized silicon grown in the high temperature dry nitrogen and the C_2HCI_3 / O_2 atmosphere were heat treated to shrink, the corresponding layer staggered activation energy was 4.37ev and 3.55ev The oxidation of C_2HCl_3 during the dry oxidation can completely eliminate the oxide layer faults, which can reduce the stacking fault density by 2-3 orders of magnitude by chemical polishing or heat treatment in dry N_2 before oxidation.