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基于分布式放大器理论,设计了一款基于GaAs赝配高电子迁移率晶体管(PHEMT)工艺的2~20GHz宽带单片集成双向放大器。该款放大器将两个独立放大器与开关控制电路集成,通过开关控制放大器的正反向导通,实现双向放大器接收和发射状态的切换。其中放大器采用的是宽带分布式低噪声放大器,开关控制电路的控制电平为0V和-5V。测试结果表明,该款放大器在+5V工作电压下,工作电流为60mA,在2~20GHz的宽带频率内实现小信号增益大于14dB,1dB压缩点输出功率大于11dBm,噪声系数小于5.5dB。双向放大器的芯片尺寸为3.1mm×2.1mm。
Based on the distributed amplifier theory, a 2 ~ 20GHz wideband monolithic integrated bidirectional amplifier based on GaAs pseudomorphic high electron mobility transistor (PHEMT) technology is designed. This amplifier integrates two independent amplifiers with the switch control circuit, controls the positive and negative conduction of the amplifier through the switch, and realizes the switching of the receiving and transmitting states of the bidirectional amplifier. Among them the amplifier adopts the broadband distributed low noise amplifier, the control level of the switch control circuit is 0V and -5V. The test results show that the amplifier has a working current of 60mA at a working voltage of + 5V and a small signal gain of more than 14dB at a broadband frequency of 2 to 20GHz. The output power of a 1dB compression point is more than 11dBm and the noise figure is less than 5.5dB. Bi-directional amplifier chip size 3.1mm × 2.1mm.