一、前言低压化学汽相淀积(简称LPCVD)技术,近两年来,在国内半导体器件工艺中,特别是以MOS为主的大规模(LSI)和超大规模(VLSI)集成电路中引起了极大的重视。Si_2N_4作为纯化膜改善了器件的性能和提高了器件的可靠性。采用LPCVD技术制备的多晶硅、二氧化硅、氮化硅和磷硅玻璃无论在经济,均匀性,重复性和投片量上都比用常压CVD技术制备的膜优越得多。采用SiHCl_3 I. Introduction Low-pressure chemical vapor deposition (referred to as LPCVD) technology, the past two years, in the domestic semiconductor device technology, especially in MOS-based large-scale (LSI) and VLSI integrated circuit caused a very Great attention. Si_2N_4 as a purification membrane to improve the performance of the device and improve the reliability of the device. Polycrystalline silicon, silicon dioxide, silicon nitride, and phosphosilicate glass produced by LPCVD are far superior in economy, uniformity, repeatability, and throughput as compared with films prepared by atmospheric CVD. Using SiHCl_3