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用分子束外延技术 (MBE)生长了以 Ga As/Al As超晶格替代 Alx Ga1 - x As所形成的 P型半导体 /超晶格分布布拉格反射镜 (DBR) .此分布布拉格反射镜的反射谱中心波长为 85 0 nm.由实验表明 ,19个周期的反射镜获得了高达 99%以上的高反射率 .与此同时 ,采取自行设计的二次钨丝掩膜质子注入法制成 15 μm× 15 μm的正方形电流注入区 ,以此测定 P型反射镜的串联电阻 ,克服了湿化学腐蚀法中腐蚀深度不易控制及侧面同时被腐蚀的缺点 ,实验得出此 P型反射镜的串联电阻仅为 5 0 Ω 左右 .在生长过程中 ,发现在只含一个铝源的分子束外延生长系统中 ,生长这种半导体 /超晶格反射镜相对其他半导体 /半导体反射镜要节省很多外延生长时间 ,因此较适合应用于多层结构的光电器件中 .
A P-type semiconductor / superlattice distributed Bragg reflector (DBR) with GaAs / AlAs superlattice replaced by AlxGa1-xAs was grown by molecular beam epitaxy (MBE). The reflectivity of the distributed Bragg reflector The center wavelength of the spectrum is 85 0 nm. Experiments show that 19-period mirrors achieve high reflectivity up to 99% .At the same time, self-designed secondary tungsten mask proton implantation is used to make 15 μm × 15μm square current injection zone, in order to determine the series resistance of the P-type mirror to overcome the wet chemical etching method is not easy to control the depth of erosion and the side of the shortcomings of corrosion, the experiment concluded that the series resistance of the P-type mirror only Is about 50 V. During growth, it has been found that growth of such semiconductor / superlattice mirrors saves a lot of epitaxial growth time compared to other semiconductor / semiconductor mirrors in a molecular beam epitaxial growth system containing only one aluminum source, It is more suitable for multi-layer structure of optoelectronic devices.