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硅单晶断面少子寿命分布均匀与否的问题,以前提及得很少。本文基于大量测试数据讨论了N 型区熔高纯硅单晶断面寿命的不均匀性及其对面垒型核辐射探测器性能的影响。
The problem of uniform distribution of the lifetime of minority-born silicon in silicon single-crystal sections has rarely been mentioned before. In this paper, based on a large number of test data, the nonuniformity of the lifetime of the N-type region of fused pure silicon and the effect on the performance of the face-type nuclear radiation detector are discussed.