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据报道,德国半导体制造商Azzurro展示了‘l-bin’波长的LED晶圆,该技术可以做到少于3 nm波长一致性生产数值,并在开发中得到1 nm的结果。该公司表示,该破纪录的1 nm成功表明AZZURRO的技术有能力做出‘1bin’硅基氮化镓LED晶圆。AZZURRO表示,硅基氮化镓晶圆的亮度和效率已经可以解决,但产量的问题至今仍无定论。氮化镓与硅之间的巨大晶格失配和热膨胀系数导致LED
According to reports, the German semiconductor manufacturer Azzurro demonstrated ’l-bin’ wavelength LED wafer, the technology can do less than 3 nm wavelength consistent production value, and get 1 nm results in the development. The company said the record-breaking 1 nm success shows that AZZURRO’s technology has the ability to make ’1bin’ GaN-on-silicon LED wafers. AZZURRO said that the brightness and efficiency of silicon-based gallium nitride wafer has been resolved, but the yield of the issue is still uncertain. The huge lattice mismatch between gallium nitride and silicon and the coefficient of thermal expansion lead to LEDs