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研究了p－型异质外延和同质外延金刚石膜的在不同温度和磁场下的磁阻，磁阻器件的结构为条形和圆盘形。实验结果表明磁阻强烈依赖于磁场、温度和样品的几何形状，圆盘结构的磁阻大于条形结构，条形结构的磁阻还取决于不同的长－宽比。利用F－S薄膜理论,计算磁场为5T时条形和圆盘结构的磁阻分别为0.38和0.74， 讨论了霍耳效应对磁阻的影响，给出了形状效应的可能机制。
The magnetoresistance of p-type heteroepitaxy and homoepitaxial diamond films at different temperatures and magnetic fields was studied. The structure of magnetoresistive devices was strip-shaped and disk-shaped. The experimental results show that the reluctance strongly depends on the magnetic field, the temperature and the geometry of the sample. The reluctance of the disk structure is larger than that of the stripe structure. The reluctance of the stripe structure also depends on the different length-width ratio. Using F-S thin film theory, the magnetoresistance of strip-shaped and disk-shaped structure is calculated to be 0.38 and 0.74 respectively when the magnetic field is 5T. The influence of Hall effect on the reluctance is discussed, and the possible mechanism of the shape effect is given.