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随着器件小型化技术的发展,硅芯片厚度成为了发展超薄封装的关键问题。为了实现大尺寸硅片减薄到100μm的批量生产,研究了减薄工艺原理和大尺寸(以直径为200 mm为例)Si片超薄工艺的控制点。通过对不同减薄工艺的对比,分析了减薄工艺不同参数对减薄质量的影响,验证了不同砂轮目数、化学腐蚀工艺对硅片减薄质量、碎片率和背面金属质量的影响。根据实验数据给出了提高减薄质量、降低碎片率、提升生产效率的工艺实现方法,实现了大尺寸硅片超薄厚度的批量生产。
With the development of device miniaturization technology, the silicon chip thickness has become a key issue for developing ultra-thin packaging. In order to realize mass production of large-size silicon wafer to 100μm, the thinning process principle and control points of large-size (200mm diameter) Si wafer ultrathin process are studied. Through the comparison of different thinning process, the influence of different parameters of thinning process on thinning quality was analyzed, and the effect of different grinding wheel mesh and chemical etching process on thinning quality, fragment rate and back metal quality of silicon wafer was verified. According to the experimental data, the method to improve the thinning quality, reduce the chip rate and improve the production efficiency is given, and the mass production of the ultra-thin silicon wafer with large size is realized.