采用磁控溅射法在硅基材料上分别制备了Cu薄膜和Cu/Ta薄膜,用X射线衍射仪(XRD)研究两种样品在不同温度热处理下的织构情况和择优取向。结果表明,加Ta薄膜的样品可显著提高Cu(111)的衍射峰强度,说明Ta薄膜层能有效增强Cu薄膜层的抗电迁移性能。加Ta层的样品在一定温度下退火后同样也能增进Cu薄膜的抗电迁移性能。 Cu films and Cu / Ta films were prepared on silicon-based materials by magnetron sputtering. The texture and preferred orientation of the two samples under different temperatures were studied by X-ray diffraction (XRD). The results show that the sample with Ta film can significantly increase the diffraction peak intensity of Cu (111), indicating that the Ta thin film layer can effectively enhance the anti-electromigration performance of the Cu thin film layer. The sample with Ta layer annealed at a certain temperature also can improve the anti-electromigration performance of the Cu film.