日本三菱电机公司大孤大学和光学技术研究所共同开发了波长266nm,输出功率20W的半导体激光激励全固休紫外激光器。全固体紫外激光器用全固体高亮度绿激光器产生绿光(波长532nm),紫外转换光学晶体CLBO来改变波长。开发的全固体紫外激光器功率输出大而且频率高,代替以往加工用激光器,期望用于光刻线路板打孔等,电子部件加工和半导体 Japan’s Mitsubishi Electric Corporation Dagusu University and Institute of Optical Technology to jointly develop a wavelength of 266nm, the output power of 20W semiconductor laser-excited all-solid-day UV laser. All-solid-state UV laser with all-solid-state high-brightness green laser to produce green light (wavelength 532nm), UV-converted optical crystal CLBO to change the wavelength. Developed all-solid-state UV laser power output large and high frequency, instead of the previous processing laser, expected for lithography circuit board drilling, electronic components processing and semiconductor