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随着器件尺寸的不断减小 ,直接隧穿电流将代替 FN电流而成为影响器件可靠性的主要因素 .数值求解的结果表明 :镜像势引起的势垒降低对超薄栅 MOS直接隧穿电流有较大的影响 .利用 WKB近似方法 ,获得了镜像势对直接隧穿电流影响的定性表达式 .镜像势对直接隧穿电流的影响随着栅电压的减小而增大 ,但是随着栅氧化层厚度的减小而减小
As the size of the device decreases, the direct tunneling current will replace the FN current and become the main factor affecting the device reliability.The numerical results show that the reduction of the potential barrier caused by the mirror potential has a significant effect on the direct tunneling current The influence of the mirror potential on the direct tunneling current is obtained by the WKB approximation method.The influence of the mirror potential on the direct tunneling current increases with the decrease of the gate voltage, The layer thickness decreases and decreases