基于0.13μm CMOS工艺,设计了一种工作于K波段的低噪声放大器。输入匹配采用一种改良π型匹配网络,输出匹配采用L+π型匹配网络,避免了电容击穿的风险和源端大电感的引入。电路使用级间L型匹配的方式,利用第一级电路的输出寄生电容和第二级电路的输入寄生电容,有效地提高了电路的增益,降低了噪声。仿真结果表明,该低噪声放大电路为单电源1.5 V供电,在27 GHz频率处的增益为27 d B,噪声系数为3.75 d B,输入回波损耗和输出回波损耗分别为-11.1 d B和-20.5 d B。 Based on the 0.13μm CMOS process, a low-noise amplifier operating in the K-band is designed. The input matching adopts a modified π-type matching network, and the output matching adopts the L + π-type matching network, avoiding the risk of capacitor breakdown and the introduction of a large inductor at the source. L-type circuit using interstage matching mode, the use of the first stage of the circuit output parasitic capacitance and the second stage of the input parasitic capacitance, effectively improve the circuit gain and reduce noise. The simulation results show that the LNA is powered by a single power source of 1.5 V with a gain of 27 d B at 27 GHz and a noise figure of 3.75 d B with an input return loss and an output return loss of -11.1 dB And -20.5 d B.