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在有效质量近似和绝热近似下,利用转移矩阵法研究了电子通过In As/In P/In As/In P/In As柱形量子线共振隧穿二极管的输运问题,分析和讨论了电子居留时间以及电子的逃逸过程.详细研究了外加电场、结构尺寸效应对居留时间和电子逃逸的影响.居留时间随电子纵向能量的演化呈现出共振现象;同时,结构的非对称性对电子居留时间有很大的影响,随着结构非对称性的增加,居留时间表现出不同的变化.利用有限差分方法研究了非对称耦合量子盘中电子的相干隧穿逃逸过程.
In the approximation of effective mass and adiabatic approximation, the transport problem of electrons passing through the In As / In P / In As / In P / In As pillar-shaped quantum tunneling tunneling diode has been investigated by the transfer matrix method. Time and electron escape process.The influence of applied electric field and structure size effect on residence time and electron escape is studied in detail.The residence time shows the resonance phenomenon with the evolution of electron longitudinal energy.At the same time, , The residence time shows different changes with the increase of the asymmetry of the structure.The coherent tunneling and escaping processes in the asymmetric coupled quantum disk are studied by the finite difference method.