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Polarization-stable 980 nm oxide-confined vertical-cavity surface-emitting lasers with 3μm diamond-shaped aperture are fabricated by comprehensively utilizing the anisotropic properties of wet etching and wet nitrogen oxidation ofⅢ-Ⅴsemiconductor materials.Polarization-stable operation along the major axis of the diamond-shaped oxide aperture with 11 dB orthogonal polarization suppression ratio is achieved in a temperature range of 15-55℃from the threshold to 4 mA.
Polarization-stable 980 nm oxide-confined vertical-cavity surface-emitting lasers with 3 μm diamond-shaped aperture are fabricated by comprehensively utilizing the anisotropic properties of wet etching and wet nitrogen oxidation of Ⅲ-Ⅴsemiconductor materials. Polarization-stable operation along the major axis of the diamond-shaped oxide aperture with 11 dB orthogonal polarization suppression ratio was achieved in a temperature range of 15-55 ° C from the threshold to 4 mA.