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本文系统介绍了用于有效地研究MOS界面电学特性的深能级瞬态谱(DLTS)法。重点叙述和分析了MOS电容的瞬态响应特性,DLTS法基本原理和测量装,以及MOS界面诸电学参量的确定方法等。
This paper systematically introduces the deep level transient spectroscopy (DLTS) method for effectively studying the electrical properties of the MOS interface. The transient response characteristics of MOS capacitors, the basic principle of DLTS method and measurement equipment, as well as the method of determining the electrical parameters of MOS interface are mainly described and analyzed.