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To achieve low threshold current as well as high single mode output power,a graded index separate confinement heterostructure(GRIN-SCH)AlGaInAs/AlGaAs quantum well laser with an optimized ridge waveguide was fabricated.The threshold current was reduced to 8 mA.An output power of 76 mW was achieved at100 mA current at room temperature,with a slope efficiency of 0.83 W/A and a horizon divergent angle of 6.3.The maximum single mode output power of the device reached as high as 450 mW.
To achieve low threshold current as well as high single mode output power, a graded index separate confinement heterostructure (GRIN-SCH) AlGaInAs / AlGaAs quantum well laser with an optimized ridge waveguide was fabricated. The threshold current was reduced to 8 mA. power of 76 mW was achieved at 100 mA current at room temperature, with a slope efficiency of 0.83 W / A and a horizon divergent angle of 6.3. maximum maximum mode output power of the device reached as high as 450 mW.