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系统研究在高放核废料存储环境下温度对纯铜腐蚀的影响。采用交流阻抗谱、Mott-Schottky技术、动电位以及恒电位极化曲线分析纯铜在不同温度下的腐蚀行为;并采用体视显微镜以及扫描电镜观察样品表面形貌,同时结合X射线光电子能谱分析钝化膜成分。结果表明,钝化膜阻抗并不随着温度的升高而一直降低,在60°C由于致密的外层结构阻抗反常增大;点蚀在此环境下可能发生且钝化膜的点蚀电位随着温度的升高而降低;钝化膜主要成分为Cu_2S,而CuS的含量随着温度的升高而增加;钝化膜主要呈p型半导体特性,阳离子空位密度在1023 cm~(-3)数量级且随着温度的升高其密度增大。
The effect of temperature on the corrosion of pure copper was systematically studied in a high-level nuclear waste storage environment. The corrosion behavior of pure copper at different temperatures was analyzed by AC impedance spectroscopy, Mott-Schottky technique, potentiodynamic potential and potentiostatic polarization curves. The surface morphology of samples was observed by stereomicroscope and scanning electron microscopy. Combined with X-ray photoelectron spectroscopy Analysis of passive film composition. The results show that the passivation film resistance does not decrease with increasing temperature, but due to the dense outer layer structure impedance increases abnormally at 60 ° C. Pitting corrosion may occur in this environment with the pitting potential While the content of CuS increased with the increase of temperature. The passivation film mainly showed p-type semiconductor with the vacancy density of 1023 cm -3, Magnitudes increase with increasing temperature.