一、前言近年来,利用扫描电子显微镜(SEM)和扫描透射电子显微镜(STEM)研究结型半导体器件和发光器件(包括表面势垒型器件)方面有了很大的发展,特别是研究器件中的单个结构缺陷,微区光电性质和能级结构方面,展现了广阔的前景,证实了它是极有效的工具之一。SEM是利用一极细的高能电子束轰击样品,激发产生多种信息,将这些信息分别收集并加以恰当地利用,便可以反应器件的各种物理性质。对于半导体器件,高能电子束 I. INTRODUCTION In recent years, great progress has been made in the investigation of junction type semiconductor devices and light emitting devices (including surface barrier type devices) using scanning electron microscopy (SEM) and scanning transmission electron microscopy (STEM), especially in research devices The single structural defects, the micro-optoelectronic properties and energy level structure, has shown a broad prospect, confirmed it is extremely effective tool. SEM is the use of a very fine high-energy electron beam bombardment of the sample, the excitation of a variety of information generated, the information collected separately and properly used to reflect the various physical properties of the device. For semiconductor devices, high-energy electron beams