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本文提出了适合于互补型横向绝缘栅双极晶体管截止瞬态弛豫的解析模型。它基于有非平衡载流子抽出下的电荷控制方程,计及集电结电荷存储效应,kirk效应和准中性基区瞬态电荷分配效应,获得瞬态截止状态下的载流子浓度和阳极电流值及其与器件参数的关系。它与作者提出的这种器件的网络模型所计算的结果和实验结果相当一致。借助此解析模型计算该器件截止时间T_0与PMOS管宽长比,大注入下载流子寿命τ_H和发射结反向注入饱和电流密度J_(Nu)的关系。利用本文结果可对这种器件进行有效地设计。
This paper presents an analytical model suitable for the cut-off transient relaxation of a complementary lateral insulated gate bipolar transistor. Based on the charge control equation with non-equilibrium carrier extraction, the effect of collector charge storage effect, kirk effect and quasi-neutral base transient charge distribution effect is taken into account to obtain the carrier concentration under transient off-state and Anode current value and its relationship with device parameters. It is in good agreement with the results calculated and the experimental results by the author’s network model for this device. With this analytical model, the relationship between the device cut-off time T_0 and the width of the PMOS transistor, the lifetime τ_H of the large injection and the saturation current density J_ (Nu) of the reverse injection are calculated. The results of this article can be used to effectively design this device.