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新的微电子和微型系统器件的产生需要各种各样新材料和新复合材料在机械特性和温度特性上的广泛利用。近几年,微电子和微型系统器件正向高密度化、精密化、微型化、薄性化和高集成化方向迅速发展。在研究这些封装的应力——应变实验技术中,全息干涉测量方法因其高灵敏度、高精度、非接触性、全场分析,可直接获取离面位移等优点被广泛的应用。本文则利用全息干涉法中的二次曝光来研究BJ016E功率放大器件的加电后发热而产生的热应力引起的形变。加热后沿着器件边缘,引线和焊点产生了非共面的离面变形。得到了一些实验现象,并初步进行了分析。
The production of new microelectronic and micro-system devices requires extensive use of a wide variety of new materials and new composites for both mechanical and temperature properties. In recent years, microelectronics and micro-system devices are the direction of high density, precision, miniaturization, thinning and highly integrated direction of rapid development. In the study of stress-strain experiment of these packages, holographic interferometry has been widely used because of its advantages of high sensitivity, high precision, non-contact, full field analysis and direct out-of-plane displacement. In this paper, we use the double exposure in holographic interferometry to study the thermal stress induced deformation of BJ016E power amplifier after it is heated. After heating along the edge of the device, lead and solder joints produce non-coplanar out-of-plane deformation. Some experimental results have been obtained and analyzed initially.