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An InGaAs/InP DHBT with an InGaAsP composite collector is designed and fabricated using triple mesa structural and planarization technology.All processes are on 3-inch wafers.The DHBT with an emitter area of 1 x 15μm~2 exhibits a current cutoff frequency f_t = 170 GHz and a maximum oscillation frequency f_(max) = 256 GHz.The breakdown voltage is 8.3 V,which is to our knowledge the highest BV_(CEO) ever reported for InGaAs/InP DHBTs in China with comparable high frequency performances.The high speed InGaAs/InP DHBTs with high breakdown voltage are promising for voltage-controlled oscillator and mixer applications at W band or even higher frequencies.
An InGaAs / InP DHBT with an InGaAsP composite collector is designed and fabricated using triple mesa structural and planarization technology. All processes are on 3-inch wafers. DHBT with an emitter area of 1 x 15μm ~ 2 exhibits a current cutoff frequency f_t = 170 GHz and a maximum oscillation frequency f_max = 256 GHz. The breakdown voltage is 8.3 V, which is to our knowledge the highest BV_ (CEO) ever reported for InGaAs / InP DHBTs in China with comparable high frequency performances.The high speed InGaAs / InP DHBTs with high breakdown voltage are promising for voltage-controlled oscillator and mixer applications at W band or even higher frequencies.