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采用气相刻蚀制绒法研究金刚石线锯切割多晶硅片制绒.加热体积比1:3、总体积400mL的HF-HNO3酸混合溶液到90℃,使酸混合溶液受热产生气相,利用气相对金刚石线锯切割多晶硅片表面进行制绒.结果表明,制绒15min之后,硅片表面的切割纹被完全去除;小腐蚀坑密布硅片表面,尺寸小于1μm,而传统湿法酸制绒所形成的腐蚀坑尺寸大于10μm.气相刻蚀后的金刚石线锯切割多晶硅片表面的微观粗糙度比传统酸混液制绒后的金刚石线锯切割多晶硅片表面的微观粗糙度高3倍多.气相制绒效果明显,并仅有12.11%的低反射率.
The gas-phase etching method was used to study the diamond wire saw cutting polycrystalline silicon wafer texturing.The mixed solution of HF-HNO3 acid with the volume of 1: 3 and the total volume of 400mL was heated to 90 ℃, the mixed acid solution was heated to generate gas phase, Wire saw cutting polycrystalline silicon surface texturing. The results show that after the texturing 15min, the surface of the silicon wafer cutting pattern is completely removed; small corrosion pits dense silicon surface, the size of less than 1μm, while the traditional wet acid texturing formed The size of the corrosion pits is greater than 10μm.The microscopic roughness of the surface of the polycrystalline silicon wafer cut by the diamond wire sawing after the vapor phase etching is more than 3 times higher than the micro roughness of the surface of the polycrystalline silicon wafer sliced by the conventional acid mixed liquid diamond dicing sawing Obviously, with only a low reflectivity of 12.11%.