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报道一种隐埋条形半导体激光器伴生高阻层电阻率的估算方法，解决了该电阻率不能用常规手段直接测量的问题；在给定的实验条件下，算得电阻率约为４１２Ω·ｃｍ；这种方法也适于其他类似情况下材料电阻率的估算．
A method for estimating the resistivity of the associated high resistivity layer of a buried bar-type semiconductor laser is reported, which solves the problem that the resistivity can not be directly measured by conventional means. Under the given experimental conditions, the resistivity is calculated to be about 412 Ω · cm. This method is also suitable for the estimation of material resistivity under other similar conditions.