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本文选用了Ｃｏ／Ｓｉ／ＧａＡｓ结构作为研究对象，经６００℃恒温退火及８００℃快速退火处理后，分别在ＧａＡｓ衬底上形成Ｃｏｓｉ２／ＧａＡｓＳｃｈｏｔｔｋｙ接触．采用多种薄膜和界面的测试技术，对ＣｏＳｉ２：／ＧａＡｓ的薄膜及界面特性进行了细致的研究．结果表明：热退大处理后，Ｃｏ／Ｓｉ经化学反应形成了较均匀的ＣｏＳｉ２单相，其薄膜电阻率约为３０μΩｃｍ．即使经９００℃的快速返火处理后，ＧａＡｓ界面仍保持相当的完整性，同时薄膜形貌也很理想．此外，采用Ｉ－Ｖ电学测试法对经７５０℃恒温退火处理后形成的ＣｏＳｉ２／ＧａＡＳＳｃｈｏｔｔｋｙ势垒进行测量，其势垒高度为ＢＨ＝０．７６ｅＶ；理想因子ｎ＝１．１４．因此，在ＧａＡｓＭＥＳＦＥＴ自对准工艺中ＣｏＳｉ２材料可望成为一种较理想的栅极材料．
In this paper, the Co / Si / GaAs structure was selected as the research object. After annealing at 600 ℃ and annealing at 800 ℃, respectively, Cosi2 / GaAsSchottky contacts were formed on GaAs substrates respectively. Using a variety of thin film and interface testing techniques, the CoSi2: / GaAs thin films and interface characteristics of a detailed study. The results show that the Co / Si single phase is formed by chemical reaction after thermal annealing treatment, and the resistivity of the film is about 30μΩcm. Even after rapid tempering at 900 ° C, the GaAs interface remains quite intact and the morphology of the film is also very good. In addition, the CoSi2 / GaASSchottky barrier formed after annealing at a constant temperature of 750 ° C was measured by an I-V electrical test method with a barrier height of BH = 0.76eV and an ideal factor of n = 1.14. Therefore, in the GaAsMESFET self-aligned process CoSi2 material is expected to become a more ideal gate material.