【摘 要】
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By pulsed anodic etching at low temperature, we prepared a porous silicon reflector with a photonic band gap centred in the long-wavelength infrared spectral re
【机 构】
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Laboratory of Polar Materials and Devices and Department of Electronic Engineering, School of Inform
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By pulsed anodic etching at low temperature, we prepared a porous silicon reflector with a photonic band gap centred in the long-wavelength infrared spectral region (centred at about 12 μtm). After proper oxidation process,the stable reflector structure, which can reflect electromagnetic wave from 8 μm to 12 μm (centred at 10 μm)within wide incidence angles (about 50°), is obtained. The wavelength shift of absorption peak of Si-H and Si-O shows the influence of oxidation process and indicates the stability of oxidized porous silicon dielectric reflector,which offers possible applications for the room temperature infrared sensor.
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