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为了实现低成本微晶硅薄膜的高速沉积,需要尽可能的优化工艺参数,特别是提高功率利用效率对于降低生产成本,以及提高工艺稳定性都具有重要的意义。文中对射频等离子体增强化学气相沉积系统的各部分功率消耗进行了测量与分析,发现实际用于辉光放电的功率利用率仅为10%以下;腔室的寄生电阻自身消耗功率占30%左右,且寄生电抗分布情况对匹配器的功率消耗影响较大。通过对系统硬件的改造,降低了寄生电抗的影响,显著地提高了功率耦合效率,在高反应气压条件下的功率利用率达到60%以上。
In order to realize the high-speed deposition of low-cost microcrystalline silicon thin film, it is necessary to optimize the process parameters as much as possible. In particular, improving the power utilization efficiency is of great significance for reducing the production cost and improving the process stability. In this paper, the power consumption of each part of radio frequency plasma enhanced chemical vapor deposition system was measured and analyzed, and it was found that the actual power utilization rate for glow discharge was only 10% or less; the parasitic resistance of the chamber itself consumed about 30% , And the distribution of parasitic reactors have a great influence on the power consumption of the matching device. By revamping the hardware of the system, the influence of parasitic reactance is reduced, the power coupling efficiency is remarkably improved, and the power utilization rate under the condition of high reaction pressure reaches more than 60%.