由于宽带宽光通信和光记录应用的需求,二极管激光器的商业用途在过去十年中极大地提高。电子和空穴被电力射入激活区,以发射光子复合,激光波长基本由激活区的带隙决定。这些激光器在光谱的近红外(08～16μｍ)和可见光区(包括蓝光)达到高效率。但由于缺乏合适的高质量小带隙半导 The commercial use of diode lasers has greatly increased over the past decade due to the demand for broadband optical communications and optical recording applications. Electrons and holes are electrically injected into the active region to emit photons, the laser wavelength is basically determined by the bandgap of the active region. These lasers achieve high efficiency in the near-infrared (08-16 μm) and visible (including blue) spectrum. However, due to the lack of suitable high-quality small-bandgap semiconductors