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We use a simple and controllable method to fabricate GaN-based light-emitting diodes(LEDs) with 22?undercut sidewalls by the successful implementation of the inductively coupled plasma reactive ion etching(ICP-RIE).Our experiment results show that the output powers of the LEDs with 22?undercut sidewalls are 34.8 mW under a 20-mA current injection,6.75% higher than 32.6 mW,the output powers of the conventional LEDs under the same current injection.
We use a simple and controllable method to fabricate GaN-based light-emitting diodes (LEDs) with 22? Undercut sidewalls by the successful implementation of the inductively coupled plasma reactive ion etching (ICP-RIE) .Our experiment results show that the output powers of the LEDs with 22? undercut sidewalls are 34.8 mW under a 20-mA current injection, 6.75% higher than 32.6 mW, the output powers of the conventional LEDs under the same current injection.