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报道了用ＭＢＥ生长的ＩｎＧａＡｓＳｂ／ＡｌＧａＡｓＳｂ多量子阱材料做成的宽条激光二极管的性能。室温下以脉冲方式工作，实现了８３ｍＷ的峰值功率输出，阈值电流为２５０ｍＡ，典型峰值波长为２．００μｍ左右。
The performance of wide-band laser diodes made of MBE-grown InGaAsSb / AlGaAsSb multiple quantum well materials is reported. Operating at room temperature in a pulsed manner, a peak power of 83 mW is achieved, with a threshold current of 250 mA and a typical peak wavelength of about 2.00 μm.