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本文利用背散射分析技术、扩展电阻测量、高能电子衍射及超高压透射电镜研究了注氧后埋SiO_2层的形成过程以及顶部剩余硅的退火行为,通过沟道背散射分析技术与霍尔测量,给出了在不同退火条件下顶部剩余硅的单晶结晶度及霍尔迁移率.结果表明:150keV下注入1.8×10~(13)O~+/cm~(?),经1250℃2h退火后,表面剩余单晶硅厚度约为1600-1900A,埋SiO_2层厚度为3000-3500A.同时,采用高温注入对于埋SiO_2层性能的改善以及顶部剩余硅的单晶恢复均是非常必要的.
In this paper, the formation process of the buried SiO 2 layer and the annealing behavior of the remaining silicon at the top were studied by means of backscattering analysis, extended resistance measurement, high-energy electron diffraction and ultra-high voltage transmission electron microscopy. Through the channel backscattering analysis and Hall measurement, The crystallinity and Hall mobility of the remaining silicon on the top of the wafer under different annealing conditions were obtained. The results show that the annealing temperature is 12 × 10 ~ (13) O ~ + / cm ~ , The thickness of the remaining single crystal silicon on the surface is about 1600-1900A, the thickness of the buried SiO 2 layer is 3000-3500 A. Meanwhile, the improvement of the performance of the buried SiO 2 layer and the recovery of the single crystal of the remaining silicon on the top are necessary.