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利用热场发射理论和数值计算方法 ,分析了碲镉汞光伏器件的电流 -电压特性 ,提取了金属 -半导体 (MS)界面参数 ,并对这些参数进行了讨论 .结果表明 ,Sn/Au金属膜 -碲镉汞薄膜 PN器件的电极界面的势垒高度锁定在“Bardeen”限 ,界面密度比介质膜 -碲镉汞的大一个量级
The current-voltage characteristics of the HgCdTe photovoltaic devices were analyzed by using the theory of thermal field emission and the numerical calculation method, and the interface parameters of the metal-semiconductor (MS) were extracted and the parameters were discussed. The results show that the Sn / Au metal film The barrier height of the electrode interface of the HgCdTe thin film PN device is locked at the “Bardeen” limit, and the interface density is one order larger than that of the dielectric film CdTe