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研究了静电感应晶体管(SIT)在大注入情况下出现的空间电荷效应,分析了空间电荷效应的物理机制.从理论上推导出了SIT工作在沟道势垒调制下的I V特性的解析表达式,实验结果表明它们符合得较好.在漏压增长过程中,有两种势垒出现(沟道势垒和空间电荷势垒),它们分别对应于沟道势垒调制和空间电荷势垒调制模式.随漏压增加,SIT逐渐从沟道势垒调制模式转向空间电荷势垒调制模式,对此转变物理过程给出合理解释,直观地给出了SIT在空间电荷效应作用下的变化规律.由于SIT小电流区域的沟道势垒调制使 SIT区别于其他器件,其中栅压对SIT空间电荷效应有非常重要的作用.
The space charge effect of electrostatic induction transistor (SIT) under large injection is studied, and the physical mechanism of space charge effect is analyzed.Analytical expression of IV characteristic of SIT under channel barrier modulation is deduced theoretically, The experimental results show that they are in good agreement.In the process of leakage growth, there are two potential barriers (channel barrier and space charge barrier), which correspond to the channel barrier modulation and space charge barrier modulation mode With the increase of the drain pressure, SIT gradually shifts from the channel barrier modulation mode to the space charge barrier modulation mode, and gives a reasonable explanation of this transitional physical process, which gives the visualization of the SIT variation under the space charge effect. Channel-barrier modulation of the small current region of SIT distinguishes SIT from other devices, where gate voltage plays a very important role in the space charge effect of SIT.