论文部分内容阅读
在以往的低功耗运算放大器中,以及试制P-24电路中经常发现:①单结二次击穿较多,击穿低且漏电大。②重复性差,同一批片子(或同一片上),单结、双结特性相差很大,β从几到几百,③合金后β比原来磷扩散后大4～5倍,甚至比套刻引线孔后也差数倍。④在P-24电路中,纵向pnp管的BV_(ce(?))低,甚至穿通的相当多。 分析其产生的原因可能是由于Cr~+离子抛光的硅片,在抛光后的损伤层很大,一般在1.2μ以上;各次高温工艺也引进了大量缺陷。经过缺陷显示,发现大量的杆状、三角锥、以
In the past, low-power op amp, and trial P-24 circuit are often found: ① single junction more secondary breakdown, low breakdown and large leakage. ② poor repeatability, the same batch of films (or the same piece), single junction, double junction characteristics vary greatly, β from a few to several hundred, ③ after the alloy β than the original large 4 to 5 times the proliferation of phosphorus, Hole after a few times worse. ④ P-24 circuit, the vertical pnp BV_ (ce (?)) Low, even through a considerable number. Analysis of its production may be due to the Cr ~ + ion polishing of silicon, the damage layer after polishing large, generally more than 1.2μ; each high temperature process also introduced a large number of defects. After the defect shows that a lot of rod-shaped, triangular pyramid to