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普通的厚膜多芯片组件（陶瓷基底）不能满足现今在军事和宇航中大批量应用的专用电路要求。一般来说，这种专用集成电路芯片是专门设计用于高频条件下运行的，其热功耗高，并有大量的高密度互联输出／输入引线。为了确定可能的解决方法，我们比较了几种ＭＣＭ技术。模拟和实验结果证实了在厚膜材料上用光成像方法实现高密度互联的一种新技术，它可以提供可靠且经济效益较好的替代先进的聚酰亚胺多层膜以及ＳＯＳ（硅芯片／硅基板）互联的新技术。本文叙述了一种新的封装工艺，并提出了三种有代表性的高密度（５～１０密耳引线间距）、高频（２５～６００ＭＨ；）多芯片组件技术。
Ordinary thick film multi-chip components (ceramic substrate) can not meet the specific circuit requirements of mass applications in military and aerospace today. In general, ASICs are specifically designed to operate at high frequencies with high thermal power dissipation and a large number of high-density interconnect output / input leads. In order to identify possible solutions, we compared several MCM techniques. Simulation and experimental results confirm a new technique for photo-imaging high-density interconnects on thick-film materials that provides reliable and cost-effective alternative to advanced polyimide multilayer films and SOS (silicon chips / Silicon substrate) interconnection of new technologies. This article describes a new packaging process and presents three representative high density (5 to 10 mil lead pitch), high frequency (25 to 600 MHz) multi-chip component technologies.