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淀积在氧化了的硅片上的多晶硅和非晶硅中的应力由多晶硅条下面侧蚀的边缘伸长情况来决定。该方法仅用于测量压应力,具有10~3dyn/cm~2的应力分辨率和距硅片250μm的空间分辨率。淀积在氧化物上未退火的硅薄膜有高的压应力(10~(10)dyn/cm~2),除了所研究的最薄多品硅薄膜(厚度为230nm)之外,经过1100℃、20min氮气中退火后,该应力减少到测试分辨率以下。
The stress in polycrystalline silicon and amorphous silicon deposited on the oxidized silicon wafer is determined by the edge elongation of the undercut under the polycrystalline silicon strip. This method is only used to measure compressive stress, with stress resolution of 10 ~ 3dyn / cm ~ 2 and spatial resolution of 250μm from silicon wafer. The un-annealed silicon films deposited on oxide have high compressive stress (10 ~ (10) dyn / cm ~ 2). Except for the thinnest multi-quality silicon thin film studied (230nm thickness) After annealing in nitrogen at 20 min, the stress is reduced below the test resolution.