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叙述了Ｂｉ，Ａｌ：ＹＩＧ薄膜的液相外延生长，研究了这种薄膜材料的光吸收系数、法拉第旋转角、磁光优值及生长感生磁各向异性与Ｂｉ含量的关系。在此基础上，连续外延生长了作单模磁光波导的双层Ｂｉ，Ａｌ：ＹＩＣ薄膜。光纤偏振器的使用使薄膜波导光隔离器向实用化迈进了一步，恒磁薄膜作偏磁场为器件集成化作出了贡献。采用ＭＯＣＶＤ技术，在ＧＧＧ（钆镓石榴石）基片上同时外延生长Ⅲ－Ⅴ族半导体薄膜和钇铁石榴石（ＹＩＧ）薄膜，把光隔离器和磁光光源直接集成在一起，是一种非常有前景的光电子集成组件。
The liquid phase epitaxial growth of Bi, Al: YIG thin films is described. The relationship between the light absorption coefficient, the Faraday rotation angle, the magneto-optical excellent value and the growth induced magnetic anisotropy and the Bi content are studied. On this basis, a double-layer Bi, Al: YIC thin film as a single-mode magneto-optical waveguide was continuously epitaxially grown. The use of optical fiber polarizer makes the thin film waveguide optical isolator one step forward in practical application. The constant magnetic field makes a contribution to device integration by using bias magnetic field. Using MOCVD, epitaxial growth of Group III-V semiconductor thin films and yttrium iron garnet (YIG) thin films on a GGG (gadolinium gallium-garnet) substrate, the optical isolator and magneto-optical light source are directly integrated together, Promising optoelectronic integrated components.