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应用光电化学响应法和:Mott-Schottky曲线法,研究了Ni201在500℃空气中生成的氧化膜和在pH值为8.4的中性缓冲溶液中阳极氧化生成钝化膜的半导体性质,分析了Ni201表面钝化膜的结构和组成.Mott-Schottky曲线表明,Ni20l在该中性溶液中生成钝化膜的平带电位约为0.40 V,其在500℃空气中生成的氧化膜的平带电位约为0.15 V,前者的载流子浓度约是后者的34倍.在中性缓冲溶液中生成钝化膜的光电流谱表明,Ni201的结构由内层NiO和外层Ni(OH)_2构成,其带隙宽度分别为2.8和1.6 eV.其中,具有晶体结构的内层NiO的带隙宽度与Ni201在500℃空气中生成的氧化膜的带隙宽度2.4 eV相似.通过光电化学法和Mott-Schottky曲线建立Ni201表面钝化膜的电子能带结构模型,解释了其内层NiO和外层Ni(OH)_2同是p型半导体组成的钝化膜的半导体性质.
The photoelectrochemical reaction method and Mott-Schottky curve method were used to study the semiconducting properties of Ni201 oxide film grown in air at 500 ℃ and anodic oxidation in a neutral buffer solution of pH 8.4. The structure and composition of the surface passivation film.The Mott-Schottky curve shows that the flatband potential of Ni20l in the neutral solution is about 0.40 V, the flat band potential of the oxide film formed in air at 500 ℃ is about 0.15 V, the former carrier concentration is about 34 times that of the latter.The photocurrent spectrum of the passivation film in neutral buffer solution shows that the structure of Ni201 is composed of the inner NiO and the outer Ni (OH) _2 With bandgap widths of 2.8 and 1.6 eV, respectively, in which the bandgap width of the inner layer of NiO with the crystal structure is similar to that of the oxide film grown by Ni201 in air at 500 ° C. The photoelectrochemical method and Mott -Schottky curve was used to establish the electronic band structure model of Ni201 surface passivation film, explaining the semiconducting properties of the passivation film consisting of the inner NiO and the outer Ni (OH) _2, which are both p-type semiconductors.