论文部分内容阅读
利用固源分子束外延设备生长出InAs/InAlAs/In P(001)纳米结构材料,探讨了As压调制的InAlAs超晶格对InAs纳米结构形貌的影响.结果表明,As压调制的InAlAs超晶格能控制InAs量子线的形成,导致高密度均匀分布的量子点的生长.结果有利于进一步理解量子点形貌控制机理.分析认为,InAs纳米结构的形貌主要由InAlAs层的各向异性应变分布和In吸附原子的各向异性扩散所决定.
InAs / InAlAs / In P (001) nanostructured materials were grown by solid-state molecular beam epitaxy, and the effects of As pressure modulated InAlAs superlattices on the morphology of InAs nanostructures were investigated. The results show that the As- The formation of InAs quantum wires can be controlled by the lattice, which leads to the growth of high-density and uniformly distributed quantum dots. The results are in favor of further understanding of the control mechanism of the quantum dot topography.The analysis shows that the morphology of InAs nanostructures is mainly composed of the anisotropy of InAlAs layers The strain distribution and the anisotropic diffusion of In adsorbed atoms are determined.