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以金属盐和硫脲为原料、水和乙醇的混合液为溶剂,采用溶胶–凝胶滴涂法制备出Cu2Zn Sn S4(CZTS)薄膜。结果表明:所得薄膜为Kesterite相CZTS纳米晶,但含有少量的Sn S2杂质,薄膜中含有大量的CZTS纳米棒,薄膜组成Cu:Zn:Sn:S的元素摩尔比为1.6:1.2:1.0:3.4,为贫铜富锌比例,但存在杂质Cl–,薄膜带宽约为1.56 e V。该薄膜未经硫化,即用于组装CZTS薄膜太阳能电池器件,其结构为钠钙玻璃/ITO/Ti O2或Zn O/Cd S/CZTS/Ag电极,器件中的Ti O2和Zn O均用溶胶–凝胶法制备。器件具有光伏效应,开路电压Uoc为267 m V,短路电流密度Jsc为0.025 m A/cm2,填充因子fF为32%。
Cu2Zn Sn S4 (CZTS) thin films were prepared by sol - gel method using metal salt and thiourea as raw materials and a mixture of water and ethanol as solvent. The results show that the obtained films are Kesterite phase CZTS nanocrystals, but contain a small amount of Sn S2 impurities. The films contain a large amount of CZTS nanorods. The elemental composition ratio of Cu: Zn: Sn: S is 1.6: 1.2: 1.0: 3.4 , Which is the ratio of Zn-rich to Cu-poor, but there is impurity Cl-, the bandwidth of the film is about 1.56 eV. The films were unvulcanized and were used to assemble CZTS thin-film solar cell devices with the structure of soda-lime glass / ITO / Ti O2 or Zn O / Cd S / CZTS / Ag electrodes. - Gel preparation. The device has a photovoltaic effect with an open circuit voltage Uoc of 267 mV, a short-circuit current density Jsc of 0.025 mA / cm2 and a fill factor fF of 32%.