采用多元芯片方法获得了一系列不同离子注入剂量的GaAs AlGaAs非对称耦合量子阱单元 ,通过光致荧光谱测量 ,研究了单纯的离子注入导致的界面混合效应 .荧光光谱行为与有效质量理论计算研究表明 ,Al原子在异质结界面的扩散在离子注入过程中已基本完成 ,而热退火作用主要是去除无辐射复合中心 . A series of GaAs AlGaAs asymmetric coupled quantum well cells with different ion implantation dose were obtained by the multi-chip method. The interfacial mixing effect caused by pure ion implantation was studied by photoluminescence spectroscopy. The theoretical calculation of fluorescence spectra and effective mass It is shown that the diffusion of Al atoms at the heterojunction interface has been basically completed during ion implantation, while the thermal annealing mainly removes the nonradiative recombination centers.