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自1978年以来,半绝缘Ⅲ-Ⅴ族化合物材料会议每两年召开一次。第四届会议于1986年5月18至21日在日本箱根举行。参加会议的国家十分广泛,各国代表共200多人。会议主要讨论的内容集中于GaAs、InP,也涉及到GaP和GaAlAs。晶体生长工艺主要讨论体单晶生长,外延内容很少。材料特性研究和测量是会议的重点,涉及面很广。下面分晶体生长和特性研究两个方面进行介绍。一、晶体生长目前半绝缘Ⅲ-Ⅴ族化合物材料主要用作外延衬底和离子注入基片,因此主要研究体材料的生长。 1.体单晶生长
Since 1978, semi-insulating III-V Group compound materials meeting once every two years. The fourth session was held in Hakone, Japan, from 18 to 21 May 1986. The countries participating in the conference are very extensive, with more than 200 delegates from various countries. The main discussion of the meeting focused on GaAs, InP, also involves GaP and GaAlAs. The crystal growth process mainly discusses the growth of bulk single crystal with little content of epitaxy. Research and measurement of material properties is the focus of the conference, covering a wide range. The following sub-crystal growth and characterization of two aspects are introduced. First, the crystal growth of semi-insulating material currently used as a III-V epitaxial substrate and ion-implanted substrate, so the main study of the growth of bulk materials. 1. Body crystal growth