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We report on a quantum dot quantum cascade detector(QD-QCD), whose structure is derived from a QD cascade laser. In this structure, more ordered In As QD layers formed in the Stranski–Krastanow growth mode on a thin Ga As buffer layer are incorporated into the active region. This QD-QCD can operate up to room temperature with a peak detection wavelength of 5.8 μm. A responsivity of 3.1 mA/W at 160 K and a detectivity of 3.6 × 10~8 Jones at 77 K are obtained. The initial performance of the detector is promising, and, by further optimizing the growth of InA s QDs, integrated QD-quantum cascade laser/QCD applications are expected.
We report on a quantum dot quantum cascade detector (QD-QCD), whose structure is derived from a QD cascade laser. In this structure, more ordered In As QD layers formed in the Stranski-Krastanow growth mode on a thin Ga As buffer layer This QD-QCD can operate up to room temperature with a peak detection wavelength of 5.8 μm. A responsivity of 3.1 mA / W at 160 K and a detectivity of 3.6 × 10 -8 Jones at 77 K are The initial performance of the detector is promising, and, by further optimizing the growth of InA s QDs, integrated QD-quantum cascade laser / QCD applications are expected.