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用经典量子电动力学理论初步研究了半导体碟型微腔激光器的设计原理 ,采用光刻、反应离子刻蚀和选择化学腐蚀等现代微加工技术制备出抽运阈值功率很低且品质因数很高的低温光抽运InGaAs/InGaAsP多量子阱微碟激光器。这种激光器制作工艺简单 ,对有效光子状态密度调制较大 ,是比较理想的半导体微腔激光器。
The design principle of the semiconductor dish-type micro-cavity laser was preliminarily researched by using the classical quantum electrodynamics theory. The modern micro-machining technology such as photolithography, reactive ion etching and selective chemical etching was used to prepare the laser with low pumping threshold power and high quality factor Low Temperature Optical Pumped InGaAs / InGaAsP Multiple Quantum Well Microplate Lasers. This laser production process is simple, the density of effective photonic state modulation is larger, is the ideal semiconductor microcavity laser.