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用XPS分析了盐酸处理前后的GaAs(100)表面。未处理GaAs(100)表面上有约1.7nm厚的氧化层;盐酸处理可除去氧化层并在表面上形成一层氯化镓物种。本实验还用355和193nm激光研究了此含氯物种的激光诱导脱附过程。结果表明,355nm激光导致氯化镓热脱附,从激光的热效应可推测出表面氯化镓物种可能是GaCl;193nm激光可将GaCl解离,从而导致光解Cl脱附。
The GaAs (100) surface before and after hydrochloric acid treatment was analyzed by XPS. An about 1.7 nm thick oxide layer is on the surface of the untreated GaAs (100); hydrochloric acid treatment removes the oxide layer and forms a gallium chloride species on the surface. The experiments also used 355 and 193 nm lasers to study the laser-induced desorption of this chlorine-containing species. The results show that 355nm laser can lead to the thermal desorption of gallium chloride. It is inferred that the surface gallium chloride species may be GaCl from the thermal effect of the laser. The 193nm laser can dissociate GaCl, resulting in the photodegradation of Cl.